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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MKI50-06A7

MKI50-06A7

MKI50-06A7 Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel,; MKI50-06A7
BC847C-TP

BC847C-TP

BC847C-TP Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; BC847C-TP
IRLS3034TRLPBF

IRLS3034TRLPBF

IRLS3034TRLPBF Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3; IRLS3034TRLPBF
PD85006TR-E

PD85006TR-E

PD85006TR-E 6W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package; PD85006TR-E
STTH30W03CW

STTH30W03CW

STTH30W03CW Turbo 2 ultrafast high voltage rectifier; STTH30W03CW
VI-B5M-IU

VI-B5M-IU

VI-B5M-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B5M-IU
PC50F2

PC50F2

PC50F2 Rectifier Diode, 1 Phase, 2 Element, 50A, 200V V(RRM), Silicon, MODULE-3; PC50F2
IAD012YHH-2

IAD012YHH-2

IAD012YHH-2 DC-DC Regulated Power Supply Module, 2 Output, 12W, Hybrid; IAD012YHH-2
DF20CA80

DF20CA80

DF20CA80 Bridge Rectifier Diode, 20A, 800V V(RRM),; DF20CA80
LS410860

LS410860

LS410860 Rectifier Diode, 1 Phase, 1 Element, 600A, 800V V(RRM), Silicon, POW-R-BLOK-2; LS410860