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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PC6012

PC6012

PC6012 Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, MODULE-3; PC6012
APT2X31DC60J

APT2X31DC60J

APT2X31DC60J Rectifier Diode, Schottky, 1 Phase, 2 Element, 600V V(RRM), Silicon Carbide, ROHS COMPLIANT, ISOTOP-4; APT2X31DC60J
TD131N08

TD131N08

TD131N08 Silicon Controlled Rectifier, 220A I(T)RMS, 131000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; TD131N08
ST330S16P0

ST330S16P0

ST330S16P0 Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN; ST330S16P0
L6004F81

L6004F81

L6004F81 4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, TO-202, TO-202, 3 PIN; L6004F81
F1842CCH1600

F1842CCH1600

F1842CCH1600 Silicon Controlled Rectifier, 40000mA I(T), 1600V V(RRM), 1 Element, ROHS COMPLIANT PACKAGE-5; F1842CCH1600
VI-2WP-EX

VI-2WP-EX

VI-2WP-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-2WP-EX
APT31N80JC3

APT31N80JC3

APT31N80JC3 Power Field-Effect Transistor, 31A I(D), 800V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4; APT31N80JC3
APTGF90DU60TG

APTGF90DU60TG

APTGF90DU60TG Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-12; APTGF90DU60TG
A50P800-4TI

A50P800-4TI

A50P800-4TI Electric Fuse, Very Fast Blow, 800A, 500VAC, 450VDC, 100000A (IR), Inline/holder; A50P800-4TI