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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

RB851YT2R

RB851YT2R

RB851YT2R Rectifier Diode, Schottky, 2 Element, 0.03A, 3V V(RRM), Silicon, SC-107A, 4 PIN; RB851YT2R
BC337-016G

BC337-016G

BC337-016G TRANS NPN GP 45V 800MA TO-92; BC337-016G
VI-B6D-IU

VI-B6D-IU

VI-B6D-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B6D-IU
VI-B7F-IW

VI-B7F-IW

VI-B7F-IW DC-DC Booster Module; VI-B7F-IW
2N4403RLRAG

2N4403RLRAG

2N4403RLRAG PNP Bipolar Transistor, TO-92 40 V, 0.6 A, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; 2N4403RLRAG
FZT591ATC

FZT591ATC

FZT591ATC Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; FZT591ATC
MCC44-18io8B

MCC44-18io8B

MCC44-18io8B Silicon Controlled Rectifier, 80A I(T)RMS, 49000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC44-18io8B
MPSA92RLRMG

MPSA92RLRMG

MPSA92RLRMG PNP Bipolar Small Signal Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; MPSA92RLRMG
APTGT150DA170D1G

APTGT150DA170D1G

APTGT150DA170D1G Insulated Gate Bipolar Transistor, 280A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT150DA170D1G
DRA5124T0L

DRA5124T0L

DRA5124T0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; DRA5124T0L