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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRFK2D250

IRFK2D250

IRFK2D250 Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET; IRFK2D250
1DI150F-055

1DI150F-055

1DI150F-055 Transistor; 1DI150F-055
F1827CCD1000

F1827CCD1000

F1827CCD1000 Rectifier Diode, 1 Phase, 2 Element, 25A, 1000V V(RRM), Silicon, MODULE-3; F1827CCD1000
APTGT50X120RTP3G

APTGT50X120RTP3G

APTGT50X120RTP3G Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; APTGT50X120RTP3G
T707123054BY

T707123054BY

T707123054BY Silicon Controlled Rectifier, 475A I(T)RMS, 475000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE T70, 3 PIN; T707123054BY
DMC561070R

DMC561070R

DMC561070R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, SC-113CB, 5 PIN; DMC561070R
PD54003L-E

PD54003L-E

PD54003L-E RF Power LDMOS transistor; PD54003L-E
GBJ806

GBJ806

GBJ806 Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN; GBJ806
DDTA124TCA-7

DDTA124TCA-7

DDTA124TCA-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; DDTA124TCA-7
FZ1200R12KL4C

FZ1200R12KL4C

FZ1200R12KL4C IGBT module for high-speed rail traction inverters. Rated 1200V and 1200A. In-stock at Shunlongwei for global dispatch.