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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DSS8110Y-7

DSS8110Y-7

DSS8110Y-7 Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6; DSS8110Y-7
2SD1763AE

2SD1763AE

2SD1763AE Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN; 2SD1763AE
MRF5S9101NBR1

MRF5S9101NBR1

MRF5S9101NBR1 RF Power Field-Effect Transistor; MRF5S9101NBR1
T607041864BT

T607041864BT

T607041864BT Silicon Controlled Rectifier, 275A I(T)RMS, 275000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607041864BT
MRF5S21045NR1

MRF5S21045NR1

MRF5S21045NR1 RF Power Field-Effect Transistor; MRF5S21045NR1
VI-27Z-EX

VI-27Z-EX

VI-27Z-EX DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-27Z-EX
IMH15AT110

IMH15AT110

IMH15AT110 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SC-74, 6 PIN; IMH15AT110
CD421490B

CD421490B

CD421490B Silicon Controlled Rectifier, 150A I(T)RMS, 90000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, POW-R-BLOK-5; CD421490B
PHMB400C12

PHMB400C12

PHMB400C12 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel; PHMB400C12
VI-2NB-EY

VI-2NB-EY

VI-2NB-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-2NB-EY