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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

S2004VS2

S2004VS2

S2004VS2 Silicon Controlled Rectifier, 4A I(T)RMS, 2500mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-251, VPAK-3; S2004VS2
VI-B23-EW

VI-B23-EW

VI-B23-EW DC-DC Booster Module, 1 Output, 100W, Hybrid, PACKAGE-9; VI-B23-EW
DAS100F05

DAS100F05

DAS100F05 DC-DC Regulated Power Supply Module,; DAS100F05
L4004F81

L4004F81

L4004F81 4 Quadrant Logic Level TRIAC, 400V V(DRM), 4A I(T)RMS, TO-202, TO-202, 3 PIN; L4004F81
PD432406

PD432406

PD432406 Silicon Controlled Rectifier, 1665A I(T)RMS, 2400V V(DRM), 2400V V(RRM), 2 Element, POW-R-BLOK-7; PD432406
ZXT10P12DE6TC

ZXT10P12DE6TC

ZXT10P12DE6TC Power Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin, SUPERSOT-6; ZXT10P12DE6TC
GBJ802

GBJ802

GBJ802 Bridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN; GBJ802
GBU10J-BP

GBU10J-BP

GBU10J-BP Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU, 4 PIN; GBU10J-BP
L2004V6

L2004V6

L2004V6 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-251, TO-251, 3 PIN; L2004V6
PRHMB400A6

PRHMB400A6

PRHMB400A6 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-5; PRHMB400A6