UPA2791GR-E2-AT Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8; UPA2791GR-E2-AT
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.