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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-JT4-EY

VI-JT4-EY

VI-JT4-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JT4-EY
VI-2TM-EW

VI-2TM-EW

VI-2TM-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2TM-EW
SMV1705-079LF

SMV1705-079LF

SMV1705-079LF Variable Capacitance Diode, S Band, 18.3pF C(T), 12V, Silicon, Hyperabrupt, SC-79, 2 PIN; SMV1705-079LF
DSCQ00100L

DSCQ00100L

DSCQ00100L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, USSMINI3-F1-B, SC-116B, 3 PIN; DSCQ00100L
SW45CXC920

SW45CXC920

SW45CXC920 Rectifier Diode, 1 Phase, 1 Element, 2055A, 4500V V(RRM), Silicon,; SW45CXC920
ZXMD65P03N8TA

ZXMD65P03N8TA

ZXMD65P03N8TA 4800mA, 30V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8; ZXMD65P03N8TA
DA6X103T0R

DA6X103T0R

DA6X103T0R Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN; DA6X103T0R
2MBI150U4H-170

2MBI150U4H-170

2MBI150U4H-170 FUJI Insulated Gate Bipolar Transistor, 150A 1700V
IRKH250-16

IRKH250-16

IRKH250-16 Silicon Controlled Rectifier, 555A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, POWER, MAGN-A-PAK-5; IRKH250-16
VI-JWZ-IX

VI-JWZ-IX

VI-JWZ-IX DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-JWZ-IX