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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CDS4004803

CDS4004803

CDS4004803 DC-DC Regulated Power Supply Module, 330W; CDS4004803
VI-23V-EU

VI-23V-EU

VI-23V-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-23V-EU
DMN2300U-7

DMN2300U-7

DMN2300U-7 Small Signal Field-Effect Transistor, 1.24A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3; DMN2300U-7
VI-BTT-CW

VI-BTT-CW

VI-BTT-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, PACKAGE-9; VI-BTT-CW
T618N10

T618N10

T618N10 Silicon Controlled Rectifier, 1250A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element,; T618N10
SD3931-10

SD3931-10

SD3931-10 175W - 100V HF/VHF DMOS TRANSISTOR; SD3931-10
VUO160-18NO7

VUO160-18NO7

VUO160-18NO7 Bridge Rectifier Diode, 3 Phase, 139A, 1800V V(RRM), Silicon, ROHS COMPLIANT, MODULE-5; VUO160-18NO7
FS25R12KT3

FS25R12KT3

FS25R12KT3 Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-28; FS25R12KT3
VI-B31-IV

VI-B31-IV

VI-B31-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B31-IV
T6271215B4DN

T6271215B4DN

T6271215B4DN Silicon Controlled Rectifier, 235.5A I(T)RMS, 1200V V(RRM), 1 Element, T62, 3 PIN; T6271215B4DN