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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

HFA100MD60D

HFA100MD60D

HFA100MD60D DIODE 100 A, SILICON, RECTIFIER DIODE, TO-244AB, Rectifier Diode; HFA100MD60D
DD600N12

DD600N12

DD600N12 Rectifier Diode, 1 Phase, 2 Element, 600A, 1200V V(RRM), Silicon, MODULE-3; DD600N12
2MBI50F-060

2MBI50F-060

2MBI50F-060 FUJI Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
B621F-2T

B621F-2T

B621F-2T Silicon Controlled Rectifier, 46000mA I(T), 400V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-6; B621F-2T
P405KW

P405KW

P405KW Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 2 Element; P405KW
VI-JNL-EW

VI-JNL-EW

VI-JNL-EW VICOR DC-DC Regulated Power Supply Module, 1 Output, 100W, 20A Hybrid, HALF BRICK PACKAGE-9
VI-BN1-IV

VI-BN1-IV

VI-BN1-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BN1-IV
T507128044AQ

T507128044AQ

T507128044AQ Silicon Controlled Rectifier, 125A I(T)RMS, 125000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507128044AQ
2STA1943

2STA1943

2STA1943 High power PNP epitaxial planar bipolar transistor; 2STA1943
CM100E3U-12H

CM100E3U-12H

CM100E3U-12H Mitsubishi Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel