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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

EPC2015

EPC2015

EPC2015 Power Field-Effect Transistor, 33A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11; EPC2015
VI-24M-EW

VI-24M-EW

VI-24M-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-24M-EW
SGP30N60

SGP30N60

SGP30N60 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN; SGP30N60
UGE1112AY4

UGE1112AY4

UGE1112AY4 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 8000V V(RRM), Silicon, HERMETIC SEALED, PLASTIC PACKAGE-2; UGE1112AY4
BTA25H-600CW3G

BTA25H-600CW3G

BTA25H-600CW3G 4 Quadrant Logic Level TRIAC, 600V V(DRM), 25A I(T)RMS, TO-220AB, LEAD FREE, CASE 221A-07, 3 PIN; BTA25H-600CW3G
V48C12C150BS

V48C12C150BS

V48C12C150BS DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, PACKAGE-7; V48C12C150BS
VI-20B-EX

VI-20B-EX

VI-20B-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid, MODULE-9; VI-20B-EX
GBJ2506-BP

GBJ2506-BP

GBJ2506-BP Bridge Rectifier Diode, 1 Phase, 25A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN; GBJ2506-BP
MAC9NG

MAC9NG

MAC9NG TRIAC, 800V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN; MAC9NG
PD55HB120

PD55HB120

PD55HB120 Silicon Controlled Rectifier, 55000mA I(T), 1200V V(RRM); PD55HB120