EPC2015 Power Field-Effect Transistor, 33A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11; EPC2015
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.