IXYP8N90C3 Insulated Gate Bipolar Transistor, 20A I(C), 900V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN; IXYP8N90C3
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.