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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

NJVNJD35N04G

NJVNJD35N04G

NJVNJD35N04G 4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE; NJVNJD35N04G
ZDT619TC

ZDT619TC

ZDT619TC Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; ZDT619TC
BSM75GD60

BSM75GD60

BSM75GD60 Insulated Gate Bipolar Transistor, 95A I(C), 600V V(BR)CES, N-Channel, MODULE-17; BSM75GD60
L-20-OV-15

L-20-OV-15

L-20-OV-15 Analog Circuit, 1 Func, PUFM1,; L-20-OV-15
VI-BT4-EV

VI-BT4-EV

VI-BT4-EV DC-DC Booster Module, 1 Output, 150W, Hybrid, PACKAGE-9; VI-BT4-EV
VI-25B-IW

VI-25B-IW

VI-25B-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-25B-IW
STPS10SM80CT

STPS10SM80CT

STPS10SM80CT Power Schottky rectifier; STPS10SM80CT
2SA2093TV2Q

2SA2093TV2Q

2SA2093TV2Q Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN; 2SA2093TV2Q
APTGT50H60T2G

APTGT50H60T2G

APTGT50H60T2G Insulated Gate Bipolar Transistor; APTGT50H60T2G
T507144064AQ

T507144064AQ

T507144064AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507144064AQ