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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J7Z-IX

VI-J7Z-IX

VI-J7Z-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J7Z-IX
Q6004F321

Q6004F321

Q6004F321 TRIAC, 600V V(DRM), 4A I(T)RMS, TO-202AB,; Q6004F321
IMB7AT108

IMB7AT108

IMB7AT108 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,; IMB7AT108
2SD1535

2SD1535

2SD1535 Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3; 2SD1535
IXTP96P085T

IXTP96P085T

IXTP96P085T Power Field-Effect Transistor, 96A I(D), 85V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN; IXTP96P085T
MIXA40WB1200TED

MIXA40WB1200TED

MIXA40WB1200TED Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, E2-PACK-24; MIXA40WB1200TED
FZTA42TC

FZTA42TC

FZTA42TC Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin; FZTA42TC
CM800HA-34H

CM800HA-34H

CM800HA-34H Mitsubishi HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 800A/1700V/IGBT/1U
TD131N12

TD131N12

TD131N12 Silicon Controlled Rectifier, 140000mA I(T), 1200V V(RRM); TD131N12
VI-B3T-EW

VI-B3T-EW

VI-B3T-EW DC-DC Booster Module, 100W; VI-B3T-EW