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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-241-CY

VI-241-CY

VI-241-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-241-CY
DTB122JKT146

DTB122JKT146

DTB122JKT146 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, 3 PIN; DTB122JKT146
2N5771

2N5771

2N5771 RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92,; 2N5771
KD221205

KD221205

KD221205 Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon; KD221205
IXGN200N60A2

IXGN200N60A2

IXGN200N60A2 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXGN200N60A2
BAT54CW-7-F

BAT54CW-7-F

BAT54CW-7-F Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3; BAT54CW-7-F
VS-26MT40

VS-26MT40

VS-26MT40 Bridge Rectifier Diode, 3 Phase, 25A, 400V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5 PIN
VCK105-16IO7

VCK105-16IO7

VCK105-16IO7 Silicon Controlled Rectifier, 180A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, ECOPAC-11; VCK105-16IO7
T72H124554DN

T72H124554DN

T72H124554DN Silicon Controlled Rectifier, 700A I(T)RMS, 700000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, CASE T72, 3 PIN; T72H124554DN
PH50S280-28

PH50S280-28

PH50S280-28 DC-DC Regulated Power Supply Module, 1 Output, 50W,; PH50S280-28