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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J3X-EW

VI-J3X-EW

VI-J3X-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J3X-EW
DRA5143Z0L

DRA5143Z0L

DRA5143Z0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; DRA5143Z0L
MCD95-12io8B

MCD95-12io8B

MCD95-12io8B Silicon Controlled Rectifier, 180A I(T)RMS, 116000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA, TO-240AA, 7 PIN; MCD95-12io8B
T7H8106504DN

T7H8106504DN

T7H8106504DN Silicon Controlled Rectifier, 1020A I(T)RMS, 1000V V(RRM), 1 Element, HERMETIC SEALED, PRESSPACK, POW-R-DISC-3; T7H8106504DN
VI-J30-IY

VI-J30-IY

VI-J30-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J30-IY
VS-ST333C04LFL0

VS-ST333C04LFL0

VS-ST333C04LFL0 Silicon Controlled Rectifier,; VS-ST333C04LFL0
PBH308AC

PBH308AC

PBH308AC Silicon Controlled Rectifier, 47.1A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element,; PBH308AC
VI-B6W-IU

VI-B6W-IU

VI-B6W-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9
IXTT20P50P

IXTT20P50P

IXTT20P50P Power Field-Effect Transistor, 20A I(D), 500V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN; IXTT20P50P
S4010LS2

S4010LS2

S4010LS2 Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; S4010LS2