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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DMC964060R

DMC964060R

DMC964060R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN; DMC964060R
VI-24X-IW

VI-24X-IW

VI-24X-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-24X-IW
DD800S33K2

DD800S33K2

DD800S33K2 Rectifier Diode, 1 Phase, 2 Element, 800A, 3300V V(RRM), Silicon,; DD800S33K2
MCC700-18io1W

MCC700-18io1W

MCC700-18io1W Silicon Controlled Rectifier,; MCC700-18io1W
VI-2W4-IY

VI-2W4-IY

VI-2W4-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-2W4-IY
APTGV25H120T3G

APTGV25H120T3G

APTGV25H120T3G Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGV25H120T3G
MKI100-12F8

MKI100-12F8

MKI100-12F8 Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, MODULE-21; MKI100-12F8
BC560

BC560

BC560 PNP Epitaxial Silicon Transistor, 2000-FNFLD; BC560
VMMK-1225-TR1G

VMMK-1225-TR1G

VMMK-1225-TR1G RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, 1.05 X 0.55MM, 0.25MM HEIGHT, SUBMINIATURE, LEADLESS PACKAGE-3; VMMK-1225-TR1G
SK75DB100D

SK75DB100D

SK75DB100D Power Bipolar Transistor, 75A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; SK75DB100D