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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DIM800DDS12-A

DIM800DDS12-A

DIM800DDS12-A Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D, 12 PIN; DIM800DDS12-A
A70P125-4

A70P125-4

A70P125-4 Electric Fuse, Very Fast Blow, 125A, 700VAC, 650VDC, 100000A (IR), Inline/holder,; A70P125-4
IXFK98N50P3

IXFK98N50P3

IXFK98N50P3 Power Field-Effect Transistor, 98A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3; IXFK98N50P3
KD7212A2

KD7212A2

KD7212A2 Power Bipolar Transistor, 25A I(C), 1-Element,; KD7212A2
L2N5RP

L2N5RP

L2N5RP 4 Quadrant Logic Level TRIAC, 200V V(DRM), 1A I(T)RMS, COMPAK-3; L2N5RP
T507124034AQ

T507124034AQ

T507124034AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507124034AQ
VI-B5L-IW

VI-B5L-IW

VI-B5L-IW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B5L-IW
MJB44H11G

MJB44H11G

MJB44H11G Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt, D2PAK 2 LEAD, 50-TUBE; MJB44H11G
S8006V

S8006V

S8006V Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3; S8006V
IRG4PSH71KDPBF

IRG4PSH71KDPBF

IRG4PSH71KDPBF Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN