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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MRF5S21130HSR3

MRF5S21130HSR3

MRF5S21130HSR3 RF Power Field-Effect Transistor; MRF5S21130HSR3
MA4P1250NM-1072T

MA4P1250NM-1072T

MA4P1250NM-1072T Pin Diode, 100V V(BR), Silicon, ROHS COMPLIANT, CERAMIC, CASE 1091, 2 PIN; MA4P1250NM-1072T
APTGT50DSK60T3G

APTGT50DSK60T3G

APTGT50DSK60T3G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGT50DSK60T3G
MJE800STU

MJE800STU

MJE800STU 4.0 A, 60 V NPN Darlington Bipolar Power Transistor, 1920-TUBE; MJE800STU
MCMA140PD1600TB

MCMA140PD1600TB

MCMA140PD1600TB Silicon Controlled Rectifier, 140000mA I(T), 1600V V(RRM),; MCMA140PD1600TB
ZC834ATC

ZC834ATC

ZC834ATC Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3; ZC834ATC
C434M

C434M

C434M Silicon Controlled Rectifier, 510.25A I(T)RMS, 900000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, T7H, 3 PIN; C434M
VI-B4H-EW

VI-B4H-EW

VI-B4H-EW DC-DC Booster Module, 100W; VI-B4H-EW
PC40016

PC40016

PC40016 Rectifier Diode; PC40016
CTB06-1200BWPT

CTB06-1200BWPT

CTB06-1200BWPT Alternistor TRIAC, 1200V V(DRM), 6A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; CTB06-1200BWPT