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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

T588N14

T588N14

T588N14 Silicon Controlled Rectifier, 1250A I(T)RMS, 588000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element,; T588N14
JANTXV2N2222AUA

JANTXV2N2222AUA

JANTXV2N2222AUA Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 4 PIN; JANTXV2N2222AUA
MAC997A8RLRPG

MAC997A8RLRPG

MAC997A8RLRPG Sensitive Gate Triac, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; MAC997A8RLRPG
6MBI25F-120

6MBI25F-120

6MBI25F-120 IGBT Module In-stock / Fuji Electric: 1200V 25A. Reliable 6-pack for motor drives. 90-day warranty, UPS application. Global shipping. Get quote.
2SC4726TLP

2SC4726TLP

2SC4726TLP RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, SC-75A, EMT3, 3 PIN; 2SC4726TLP
VI-2W0-EW

VI-2W0-EW

VI-2W0-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2W0-EW
MBRT12020R

MBRT12020R

MBRT12020R 20V 120A Silicon Schottky Rectifier in Three Tower Package; MBRT12020R
IRF6644TR1PBF

IRF6644TR1PBF

IRF6644TR1PBF Power Field-Effect Transistor, 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,; IRF6644TR1PBF
RHP030N03T100

RHP030N03T100

RHP030N03T100 Small Signal Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN; RHP030N03T100
PDMB200B12

PDMB200B12

PDMB200B12 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,; PDMB200B12