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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-22W-EX

VI-22W-EX

VI-22W-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-22W-EX
2SD1803T-E

2SD1803T-E

2SD1803T-E Bipolar Transistor, (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 500-BLKBG; 2SD1803T-E
7MBR50SB060

7MBR50SB060

7MBR50SB060 IGBT Module In-stock / Fuji Electric: 600V 50A PIM. Reliable CIB integration. 90-day warranty, motor drives. Global shipping. Request pricing now.
VI-J1Z-EX

VI-J1Z-EX

VI-J1Z-EX DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J1Z-EX
APTGF300DU120G

APTGF300DU120G

APTGF300DU120G Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-7; APTGF300DU120G
VI-B6W-IV

VI-B6W-IV

VI-B6W-IV DC-DC Booster Module, 150W; VI-B6W-IV
TIP147FTU

TIP147FTU

TIP147FTU PNP Epitaxial Darlington Transistor, 360-TUBE; TIP147FTU
SK008V

SK008V

SK008V Silicon Controlled Rectifier, 8A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3; SK008V
APTGF250SK60D3G

APTGF250SK60D3G

APTGF250SK60D3G Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN; APTGF250SK60D3G
2SD2114KT146V

2SD2114KT146V

2SD2114KT146V Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN; 2SD2114KT146V