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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-BN1-EU

VI-BN1-EU

VI-BN1-EU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-BN1-EU
VI-J5B-IZ

VI-J5B-IZ

VI-J5B-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J5B-IZ
VSKT430-18

VSKT430-18

VSKT430-18 Silicon Controlled Rectifier, 675A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 2 Element, ROHS COMPLIANT, SUPER MAGN-A-PAK-7; VSKT430-18
2N2219AL

2N2219AL

2N2219AL Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN; 2N2219AL
MAGX-003135-120L00

MAGX-003135-120L00

MAGX-003135-120L00 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; MAGX-003135-120L00
51MT100KB

51MT100KB

51MT100KB Silicon Controlled Rectifier, 1000 V, SCR; 51MT100KB
CM150DY-28H

CM150DY-28H

CM150DY-28H Mitsubishi Insulated Gate Bipolar Transistor, 150A, 1400V
DAS100F24

DAS100F24

DAS100F24 DC-DC Regulated Power Supply Module,; DAS100F24
DDTC143TCA-7

DDTC143TCA-7

DDTC143TCA-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; DDTC143TCA-7
MCR218-2G

MCR218-2G

MCR218-2G Silicon Controlled Rectifier, 8A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, CASE 221A-09, 3 PIN; MCR218-2G