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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MJE18002G

MJE18002G

MJE18002G 2.0 A, 450 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE; MJE18002G
GBU804

GBU804

GBU804 Bridge Rectifier Diode, 1 Phase, 8A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU, 4 PIN; GBU804
AOTF42S60L

AOTF42S60L

AOTF42S60L Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; AOTF42S60L
IRFR5305PBF

IRFR5305PBF

IRFR5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3; IRFR5305PBF
IXGT72N60B3

IXGT72N60B3

IXGT72N60B3 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA, PLASTIC, TO-268, 3 PIN; IXGT72N60B3
VI-J4M-IW

VI-J4M-IW

VI-J4M-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J4M-IW
VI-J3X-EW

VI-J3X-EW

VI-J3X-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J3X-EW
DRA5143Z0L

DRA5143Z0L

DRA5143Z0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; DRA5143Z0L
MCD95-12io8B

MCD95-12io8B

MCD95-12io8B Silicon Controlled Rectifier, 180A I(T)RMS, 116000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA, TO-240AA, 7 PIN; MCD95-12io8B
T7H8106504DN

T7H8106504DN

T7H8106504DN Silicon Controlled Rectifier, 1020A I(T)RMS, 1000V V(RRM), 1 Element, HERMETIC SEALED, PRESSPACK, POW-R-DISC-3; T7H8106504DN