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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J30-IY

VI-J30-IY

VI-J30-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J30-IY
VS-ST333C04LFL0

VS-ST333C04LFL0

VS-ST333C04LFL0 Silicon Controlled Rectifier,; VS-ST333C04LFL0
PBH308AC

PBH308AC

PBH308AC Silicon Controlled Rectifier, 47.1A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element,; PBH308AC
VI-B6W-IU

VI-B6W-IU

VI-B6W-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9
IXTT20P50P

IXTT20P50P

IXTT20P50P Power Field-Effect Transistor, 20A I(D), 500V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN; IXTT20P50P
S4010LS2

S4010LS2

S4010LS2 Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; S4010LS2
170M7102

170M7102

170M7102 Electric Fuse, 2000A, 690VAC, 200000A (IR), Inline/holder,; 170M7102
RN142GT2R

RN142GT2R

RN142GT2R Pin Diode, 60V V(BR),; RN142GT2R
RUF015N02TL

RUF015N02TL

RUF015N02TL Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT3, 3 PIN; RUF015N02TL
HTZ280H32K

HTZ280H32K

HTZ280H32K Rectifier Diode, 1 Phase, 2 Element, 4.7A, 3200V V(RRM), Silicon, ZH, 3 PIN; HTZ280H32K