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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXGH24N120C3H1

IXGH24N120C3H1

IXGH24N120C3H1 Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXGH24N120C3H1
VI-B5F-CW

VI-B5F-CW

VI-B5F-CW DC-DC Booster Module, 100W; VI-B5F-CW
MIG50Q6CSB1X

MIG50Q6CSB1X

MIG50Q6CSB1X Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES; MIG50Q6CSB1X
VI-B34-IU

VI-B34-IU

VI-B34-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B34-IU
PD808

PD808

PD808 Microprocessor, 8-Bit, 8MHz, CMOS, CDIP40, CERAMIC, DIP-40; PD808
W2958NC280

W2958NC280

W2958NC280 Rectifier Diode,; W2958NC280
APTGT300SK120D3G

APTGT300SK120D3G

APTGT300SK120D3G Insulated Gate Bipolar Transistor, 440A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT300SK120D3G
VI-JNT-IX

VI-JNT-IX

VI-JNT-IX VICOR DC-DC Regulated Power Supply Module, 1 Output, 75W,15A
T627101584DN

T627101584DN

T627101584DN Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, CASE T62, 3 PIN; T627101584DN
IRGS8B60KPBF

IRGS8B60KPBF

IRGS8B60KPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; IRGS8B60KPBF