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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

1DI50F-120

1DI50F-120

1DI50F-120 Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; 1DI50F-120
VI-J0V-CX

VI-J0V-CX

VI-J0V-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J0V-CX
SM2G300US60

SM2G300US60

SM2G300US60 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, 7PM-BA, 7 PIN; SM2G300US60
YW1512

YW1512

YW1512 Converter,; YW1512
DZ600N12

DZ600N12

DZ600N12 Rectifier Diode, 1 Phase, 1 Element, 735A, 1200V V(RRM), Silicon, MODULE-2
VI-J11-IW

VI-J11-IW

VI-J11-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J11-IW
VI-J7X-IX

VI-J7X-IX

VI-J7X-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J7X-IX
VI-23K-CY

VI-23K-CY

VI-23K-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-23K-CY
MG600Q2YS60A

MG600Q2YS60A

MG600Q2YS60A IGBT Module In-stock / Toshiba: 1200V, 600A dual configuration. Engineered for high-reliability motor drives and inverters. 90-day warranty. Contact our sales team.
MRF5S9080NR1

MRF5S9080NR1

MRF5S9080NR1 RF POWER, FET; MRF5S9080NR1