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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

1DI400M-050

1DI400M-050

1DI400M-050 Power Bipolar Transistor, 400A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin, M109, 5 PIN; 1DI400M-050
IMT200-24-3.3

IMT200-24-3.3

IMT200-24-3.3 Analog Circuit; IMT200-24-3.3
T72H083564DN

T72H083564DN

T72H083564DN Silicon Controlled Rectifier, 550A I(T)RMS, 550000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, CASE T72, 3 PIN; T72H083564DN
VWO60-08IO7

VWO60-08IO7

VWO60-08IO7 Silicon Controlled Rectifier, 43A I(T)RMS, 800V V(DRM), 800V V(RRM), 6 Element, MODULE-12; VWO60-08IO7
VI-BNJ-CW

VI-BNJ-CW

VI-BNJ-CW DC-DC Booster Module, 100W; VI-BNJ-CW
KBPC3502W-G

KBPC3502W-G

KBPC3502W-G Bridge Rectifier Diode, 35A, 200V V(RRM),; KBPC3502W-G
CDC7630-000

CDC7630-000

CDC7630-000 Mixer Diode, Zero Barrier, Very High Frequency to Millimeter Wave Band, 5000ohm Z(V) Max, Silicon, DIE-2; CDC7630-000
2SC4420

2SC4420

2SC4420 Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-92, TOP-3F-A1, FULL PACK-3; 2SC4420
DMA261030R

DMA261030R

DMA261030R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MO-178AA, HALOGEN FREE AND ROHS COMPLIANT, MINI5-G3-B, MO-178, SC-74A, 5 PIN; DMA261030R
CD671215B

CD671215B

CD671215B Silicon Controlled Rectifier, 355A I(T)RMS, 150000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, POW-R-BLOK-7; CD671215B