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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MCC19-12io8B

MCC19-12io8B

MCC19-12io8B Silicon Controlled Rectifier, 40A I(T)RMS, 18000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC19-12io8B
DCX142JH-7

DCX142JH-7

DCX142JH-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, GREEN, PLASTIC PACKAGE-6; DCX142JH-7
VI-JTP-EX

VI-JTP-EX

VI-JTP-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-JTP-EX
VI-BTY-CW

VI-BTY-CW

VI-BTY-CW DC-DC Booster Module, 1 Output, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BTY-CW
MUR3060WT

MUR3060WT

MUR3060WT Power Rectifier, Ultra-Fast Recovery, Switch-mode, 30 A, 600 V, TO-247, 30-TUBE; MUR3060WT
KBP204G-BP

KBP204G-BP

KBP204G-BP Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBP, 4 PIN; KBP204G-BP
VI-BTJ-EW

VI-BTJ-EW

VI-BTJ-EW DC-DC Booster Module, 100W; VI-BTJ-EW
CPT300100D

CPT300100D

CPT300100D Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 100V V(RRM), Silicon, PACKAGE-2; CPT300100D
APTGT30A170D1G

APTGT30A170D1G

APTGT30A170D1G Insulated Gate Bipolar Transistor, 45A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT30A170D1G
2SA1096AQ

2SA1096AQ

2SA1096AQ Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN; 2SA1096AQ