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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

L0103NEAP

L0103NEAP

L0103NEAP 4 Quadrant Logic Level TRIAC, 800V V(DRM), 1A I(T)RMS, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; L0103NEAP
VSKH230-16

VSKH230-16

VSKH230-16 Silicon Controlled Rectifier, 510A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MAGN-A-PAK-5; VSKH230-16
VI-2T1-CY

VI-2T1-CY

VI-2T1-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-2T1-CY
DSS2x61-0045A

DSS2x61-0045A

DSS2x61-0045A Rectifier Diode, Schottky, 1 Phase, 2 Element, 60A, 45V V(RRM), Silicon, MINIBLOC-4; DSS2x61-0045A
MUBW10-06A7

MUBW10-06A7

MUBW10-06A7 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel,; MUBW10-06A7
VYK70-16IO7

VYK70-16IO7

VYK70-16IO7 Silicon Controlled Rectifier, 43000mA I(T), 1600V V(DRM), 1600V V(RRM), 3 Element,; VYK70-16IO7
NSBC114YF3T5G

NSBC114YF3T5G

NSBC114YF3T5G NPN Bipolar Digital Transistor (BRT), SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL; NSBC114YF3T5G
IXGH12N60BD1

IXGH12N60BD1

IXGH12N60BD1 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXGH12N60BD1
VI-B12-CV

VI-B12-CV

VI-B12-CV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B12-CV
NFC25-12T05-12

NFC25-12T05-12

NFC25-12T05-12 DC-DC Regulated Power Supply Module, 3 Output, 25W, Hybrid; NFC25-12T05-12