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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

80RIA80

80RIA80

80RIA80 Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, HERMETIC SEALED, TO-94, 3 PIN; 80RIA80
2N5555

2N5555

2N5555 JFET Switching, 1000-BLKBX; 2N5555
VI-25D-CY

VI-25D-CY

VI-25D-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-25D-CY
6MBI300U4-170

6MBI300U4-170

6MBI300U4-170 Insulated Gate Bipolar Transistor, 450A I(C), 1700V V(BR)CES, N-Channel, MODULE-29; 6MBI300U4-170
DRA3143E0L

DRA3143E0L

DRA3143E0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PIN; DRA3143E0L
MPSW51ARLRP

MPSW51ARLRP

MPSW51ARLRP 1000mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92; MPSW51ARLRP
VS-2KBB80R

VS-2KBB80R

VS-2KBB80R Bridge Rectifier Diode, 1 Phase, 1.9A, 800V V(RRM), Silicon, ROHS COMPLIANT, COMPACT, PLASTIC, 2KBB, 4 PIN; VS-2KBB80R
VI-B3R-EV

VI-B3R-EV

VI-B3R-EV DC-DC Booster Module, 150W; VI-B3R-EV
MUN5316DW1T1G

MUN5316DW1T1G

MUN5316DW1T1G Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; MUN5316DW1T1G
2SB1420

2SB1420

2SB1420 Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SB1420