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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-202-CX

VI-202-CX

VI-202-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid, MODULE-9; VI-202-CX
PMCXB900UE

PMCXB900UE

PMCXB900UE MOSFET N/P-CH 20V 0.6A/0.5A 6DFN; PMCXB900UE
WG20025S

WG20025S

WG20025S Silicon Controlled Rectifier, 2480 A, 1900 V, GATE TURN-OFF SCR; WG20025S
VI-20Y-CX

VI-20Y-CX

VI-20Y-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid, MODULE-9; VI-20Y-CX
VI-B4D-EV

VI-B4D-EV

VI-B4D-EV DC-DC Booster Module, 150W; VI-B4D-EV
VI-BT4-CW

VI-BT4-CW

VI-BT4-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BT4-CW
MG50BZ100

MG50BZ100

MG50BZ100 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES; MG50BZ100
2DD2678-13

2DD2678-13

2DD2678-13 Small Signal Bipolar Transistor, 3A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC, 4 PIN; 2DD2678-13
SG2700U22

SG2700U22

SG2700U22 Silicon Controlled Rectifier, 800 A, 1600 V, GATE TURN-OFF SCR; SG2700U22
SPB16N50C3

SPB16N50C3

SPB16N50C3 Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN; SPB16N50C3