IXFN60N80P Power Field-Effect Transistor, 53A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4; IXFN60N80P
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.