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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

W1411LC300

W1411LC300

W1411LC300 Rectifier Diode, 1 Phase, 1 Element, 1411A, 3000V V(RRM), Silicon,; W1411LC300
V24C5C100BL2

V24C5C100BL2

V24C5C100BL2 DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; V24C5C100BL2
VS-36MB40A

VS-36MB40A

VS-36MB40A Bridge Rectifier Diode, 1 Phase, 35A, 400V V(RRM), Silicon, ROHS COMPLIANT, D-34, 4 PIN; VS-36MB40A
IXTK60N50L2

IXTK60N50L2

IXTK60N50L2 Power Field-Effect Transistor, 60A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN; IXTK60N50L2
KBPC2504W-G

KBPC2504W-G

KBPC2504W-G Bridge Rectifier Diode, 25A, 400V V(RRM),; KBPC2504W-G
APT70GR65B

APT70GR65B

APT70GR65B Insulated Gate Bipolar Transistor; APT70GR65B
L2006L6

L2006L6

L2006L6 4 Quadrant Logic Level TRIAC, 200V V(DRM), 6A I(T)RMS, TO-220AB, ISOLATED TO-220, 3 PIN; L2006L6
2MBI400NT-060

2MBI400NT-060

2MBI400NT-060 IGBT Module In-stock / Fuji Electric: 600V 400A. Low Vce(sat) & high-speed switching. 90-day warranty, UPS/Inverter use. Global shipping. Get quote.
SI4562DY-T1-GE3

SI4562DY-T1-GE3

SI4562DY-T1-GE3 TRANSISTOR 7.1 A, 20 V, 0.025 ohm, N AND P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power; SI4562DY-T1-GE3
VI-J6T-CX

VI-J6T-CX

VI-J6T-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J6T-CX