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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-24W-IU

VI-24W-IU

VI-24W-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-24W-IU
MSD75-12

MSD75-12

MSD75-12 Bridge Rectifier Diode, 3 Phase, 75A, 1200V V(RRM), Silicon, CASE M2, 5 PIN; MSD75-12
2SA2013-TD-E

2SA2013-TD-E

2SA2013-TD-E Bipolar Transistor, -50V, -4A, Low VCE(sat), (PNP)NPN Single PCP, SOT-89 / PCP-1, 1000-REEL; 2SA2013-TD-E
IRGP4069D-EPBF

IRGP4069D-EPBF

IRGP4069D-EPBF Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE, PLASTIC PACKAGE-3; IRGP4069D-EPBF
STZ6.8NT146

STZ6.8NT146

STZ6.8NT146 Zener Diode, 6.8V V(Z), 5%, 0.2W, Silicon, Unidirectional,; STZ6.8NT146
DSA5G01B0L

DSA5G01B0L

DSA5G01B0L Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; DSA5G01B0L
FQT1N80TF_WS

FQT1N80TF_WS

FQT1N80TF_WS N-Channel QFET® MOSFET 800V, 0.2A, 20Ω, SOT-223 4L, 16000-TAPE REEL; FQT1N80TF_WS
C380N

C380N

C380N Silicon Controlled Rectifier, 400A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; C380N
VI-J10-CW

VI-J10-CW

VI-J10-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J10-CW
APT65GP60L2DQ2G

APT65GP60L2DQ2G

APT65GP60L2DQ2G Insulated Gate Bipolar Transistor, 198A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264MAX, 3 PIN; APT65GP60L2DQ2G