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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APTGF10X120P2G

APTGF10X120P2G

APTGF10X120P2G Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; APTGF10X120P2G
MDK600-18N1

MDK600-18N1

MDK600-18N1 Rectifier Diode, 1 Phase, 2 Element, 883A, 1800V V(RRM), Silicon, MODULE-3; MDK600-18N1
SI4228DY-T1-E3

SI4228DY-T1-E3

SI4228DY-T1-E3 Small Signal Field-Effect Transistor; SI4228DY-T1-E3
VUO36-14NO8

VUO36-14NO8

VUO36-14NO8 Bridge Rectifier Diode, 3 Phase, 35A, 1400V V(RRM), Silicon,; VUO36-14NO8
QRE0620001

QRE0620001

QRE0620001 Bridge Rectifier Diode, 3 Phase, 200A, 600V V(RRM), Silicon,; QRE0620001
PK130F120

PK130F120

PK130F120 Silicon Controlled Rectifier, 130000mA I(T), 1200V V(RRM); PK130F120
PCHMB50A6

PCHMB50A6

PCHMB50A6 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel; PCHMB50A6
VI-JNF-EZ

VI-JNF-EZ

VI-JNF-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W,5A Hybrid
VI-J0B-CZ

VI-J0B-CZ

VI-J0B-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J0B-CZ
T7H8066504DN

T7H8066504DN

T7H8066504DN Silicon Controlled Rectifier, 1020A I(T)RMS, 600V V(RRM), 1 Element, HERMETIC SEALED, PRESSPACK, POW-R-DISC-3; T7H8066504DN