IGBT Modules - Transistors from Mitsubishi & Fuji - Page 2923

1DI200E-055

1DI200E-055 Power Bipolar Transistor, 200A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin, M207, 11 PIN; 1DI200E-055

Fuji Qty: 3831pcs

SKMD150F12

SKMD150F12 Power Module Diode 1.2 kV 117 A 2.2 V 1 Pair Common Cathode;

SEMIKRON Qty: 340pcs Price: US$25

VI-HAMD-IM

VI-HAMD-IM AC-DC Power Factor Correction Module, 2 Output, 600W, Hybrid,; VI-HAMD-IM

VICOR Qty: 158pcs

T510048004AQ

T510048004AQ Silicon Controlled Rectifier, 125A I(T)RMS, 125000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-94, HERMETIC SEALED, METAL PACKAGE-3; T510048004AQ

Powerex Inc Qty: 1020pcs

IXYH30N120C3

IXYH30N120C3 Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel,; IXYH30N120C3

IXYS Qty: 1689pcs

DTD743ZETL

DTD743ZETL Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SC-75A, EMT3, 3 PIN; DTD743ZETL

Rohm Semiconductor Qty: 876pcs

2N7002V-7

2N7002V-7 Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; 2N7002V-7

Diodes Qty: 1371pcs

MG8G6EM1

MG8G6EM1 TRANSISTOR 8 A, 450 V, 0.75 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-64A1B, 15 PIN, FET General Purpose Power; MG8G6EM1

TOSHIBA Qty: -180pcs

LX807MTRP

LX807MTRP 4 Quadrant Logic Level TRIAC, 600V V(DRM), 0.8A I(T)RMS, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4; LX807MTRP

Littelfuse Inc Qty: 1568pcs

SK70D08

SK70D08 Bridge Rectifier Diode, 1 Phase, 70A, 800V V(RRM), Silicon, PLASTIC, CASE T7, SEMITOP 2, 7 PIN; SK70D08

SEMIKRON Qty: 60pcs