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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-2T2-IU

VI-2T2-IU

VI-2T2-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid,; VI-2T2-IU
FSB50325AT

FSB50325AT

FSB50325AT Intelligent Power Module (IPM), Motion Control, 180-TUBE; FSB50325AT
IRF3808STRLPBF

IRF3808STRLPBF

IRF3808STRLPBF Power Field-Effect Transistor, 75A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3; IRF3808STRLPBF
VI-20L-IY

VI-20L-IY

VI-20L-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-20L-IY
MMBZ5252BS-7-F

MMBZ5252BS-7-F

MMBZ5252BS-7-F Zener Diode, 24V V(Z), 5%, 0.2W, Silicon, Unidirectional, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6; MMBZ5252BS-7-F
T6071015B4BT

T6071015B4BT

T6071015B4BT Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T6071015B4BT
HSMS-2860-TR1

HSMS-2860-TR1

HSMS-2860-TR1 Mixer Diode, Ultra High Frequency to C Band, Silicon; HSMS-2860-TR1
SEMIX603GAR066HDS

SEMIX603GAR066HDS

SEMIX603GAR066HDS Insulated Gate Bipolar Transistor, 720A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 3S, 18 PIN; SEMIX603GAR066HDS
R9G01418XX

R9G01418XX

R9G01418XX Rectifier Diode, 1 Phase, 1 Element, 1800A, 1400V V(RRM), Silicon, HERMETIC SEALED, CASE R9G, 2 PIN; R9G01418XX
VI-25B-IX

VI-25B-IX

VI-25B-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-25B-IX