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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SK80GM063

SK80GM063

SK80GM063 Insulated Gate Bipolar Transistor, 81A I(C), 600V V(BR)CES, N-Channel, CASE T35, SEMITOP-10; SK80GM063
DCP69-13

DCP69-13

DCP69-13 Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-4; DCP69-13
2N6517TA

2N6517TA

2N6517TA High Voltage Transistors, 2000-FNFLD; 2N6517TA
VBO20-14NO2

VBO20-14NO2

VBO20-14NO2 Bridge Rectifier Diode, 1 Phase, 31A, 1400V V(RRM), Silicon,; VBO20-14NO2
V300B5C200BL

V300B5C200BL

V300B5C200BL DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, PACKAGE-9; V300B5C200BL
DB155G

DB155G

DB155G 600V 1.5A Silicon Bridge Rectifiers in DB Package; DB155G
A70QS400-4

A70QS400-4

A70QS400-4 Electric Fuse, 400A, 700VAC, 700VDC, 200000A (IR), Inline/holder,; A70QS400-4
IRKH500-12

IRKH500-12

IRKH500-12 Silicon Controlled Rectifier, 785A I(T)RMS, 500000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, SUPER MAGN-A-PAK-4; IRKH500-12
VI-J1J-CW

VI-J1J-CW

VI-J1J-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J1J-CW
MID400-12E4

MID400-12E4

MID400-12E4 Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MID400-12E4