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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

KK70F-40

KK70F-40

KK70F-40 Silicon Controlled Rectifier, 70000mA I(T), 400V V(RRM), 2 Element; KK70F-40
VUO110-16NO7

VUO110-16NO7

VUO110-16NO7 Bridge Rectifier Diode, 3 Phase, 118A, 1600V V(RRM), Silicon, ROHS COMPLIANT, MODULE-5; VUO110-16NO7
PE250HB120

PE250HB120

PE250HB120 Silicon Controlled Rectifier, 250000mA I(T), 1200V V(RRM); PE250HB120
6MBI225U4-120

6MBI225U4-120

6MBI225U4-120 IGBT Module In-stock / Fuji Electric: 1200V 225A 6-Pack. Trench-gate tech for high efficiency. 90-day warranty. Contact our sales team.
VI-JN1-EY

VI-JN1-EY

VI-JN1-EY DC-DC Regulated Power Supply Module, 1 Output, 50W 10A
PH300F110-5

PH300F110-5

PH300F110-5 DC-DC Regulated Power Supply Module, 1 Output, 300W,; PH300F110-5
2STF2550

2STF2550

2STF2550 Low voltage high performance PNP power transistors; 2STF2550
SCT2080KEC

SCT2080KEC

SCT2080KEC Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3; SCT2080KEC
QSL11TR

QSL11TR

QSL11TR Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TSMT5, 5 PIN; QSL11TR
2SD2226KT146V

2SD2226KT146V

2SD2226KT146V Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN; 2SD2226KT146V