IGBT

2SAR522UBTL

2SAR522UBTL Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN; 2SAR522UBTL

Rohm Qty: 3354pcs

IXFN64N50P

IXFN64N50P Power Field-Effect Transistor, 61A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4; IXFN64N50P

IXYS Qty: 339pcs

TT8J1TR

TT8J1TR Power Field-Effect Transistor, 2.5A I(D), 12V, 0.061ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSST8, 8 PIN; TT8J1TR

Rohm Semiconductor Qty: 425pcs

SI4542DY-T1-GE3

SI4542DY-T1-GE3 TRANSISTOR 6.9 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power; SI4542DY-T1-GE3

Vishay Siliconix Qty: 1006pcs

SKM40GAR101D

SKM40GAR101D Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel; SKM40GAR101D

SEMIKRON Qty: 230pcs

CPT40080A

CPT40080A Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 80V V(RRM), Silicon, PACKAGE-2; CPT40080A

Microsemi Power Products Group Qty: 2236pcs

W2664NC300

W2664NC300 Rectifier Diode, 1 Phase, 1 Element, 2664A, 3000V V(RRM), Silicon,; W2664NC300

WESTCODE Qty: 163pcs

VI-BT1-IW

VI-BT1-IW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BT1-IW

VICOR

2MBI300U4E-120

2MBI300U4E-120 Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; 2MBI300U4E-120

Fuji Qty: 4340pcs

APTGT30H170T3G

APTGT30H170T3G Insulated Gate Bipolar Transistor, 45A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGT30H170T3G

Microsemi Power Products Group Qty: 1778pcs