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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-BT0-EU

VI-BT0-EU

VI-BT0-EU DC-DC Booster Module; VI-BT0-EU
JWS300-2

JWS300-2

JWS300-2 AC-DC Regulated Power Supply Module,; JWS300-2
2N4372

2N4372

2N4372 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element; 2N4372
MG30G1BL4

MG30G1BL4

MG30G1BL4 TRANSISTOR 30 A, 450 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power; MG30G1BL4
VI-JNY-EW

VI-JNY-EW

VI-JNY-EW VICOR DC-DC Regulated Power Supply Module, 1 Output, 100W,20A Hybrid, HALF BRICK PACKAGE-9
VI-B3F-IU

VI-B3F-IU

VI-B3F-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B3F-IU
VI-BT0-CW

VI-BT0-CW

VI-BT0-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BT0-CW
VI-B30-EU

VI-B30-EU

VI-B30-EU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B30-EU
CD611816B

CD611816B

CD611816B Rectifier Diode, 1 Phase, 2 Element, 160A, 1800V V(RRM), Silicon, POW-R-BLOK-3; CD611816B
T4771N28TOF

T4771N28TOF

T4771N28TOF Silicon Controlled Rectifier, 10110A I(T)RMS, 4770000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element; T4771N28TOF