IGBT Modules - Transistors from Mitsubishi & Fuji - Page 2992

T6271025B4DN

T6271025B4DN Silicon Controlled Rectifier, 392.5A I(T)RMS, 1000V V(RRM), 1 Element, T62, 3 PIN; T6271025B4DN

Powerex Inc Qty: 1545pcs

T627082084DN Silicon Controlled Rectifier, 315A I(T)RMS, 315000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, CASE T62, 3 PIN; T627082084DN

Powerex Inc Qty: 1483pcs

W1263YH160 DIODE 1263 A, 1600 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W1263YH160

WESTCODE Qty: -27pcs

MSDM200-18 Bridge Rectifier Diode, 3 Phase, 200A, 1800V V(RRM), Silicon, CASE M3-1, 5 PIN; MSDM200-18

Microsemi Power Products Group Qty: 879pcs

VBO68-12NO7 Bridge Rectifier Diode, 1 Phase, 68A, 1200V V(RRM), Silicon, ROHS COMPLIANT, ECOPAC-4; VBO68-12NO7

IXYS Qty: 2448pcs

Assess the Fuji Electric 2MBI150VH-170-50 IGBT module for traction inverter repairs: 1700 V, 150 A at 80 °C case temperature, M239 package.

Fuji Electric Qty: 215pcs Price: US$51

SW38CXC515 DIODE 1186 A, 3800 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW38CXC515

WESTCODE Qty: 90pcs

HBS050ZJ-A DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid; HBS050ZJ-A

IPD Qty: 10pcs

MW6S010NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA; MW6S010NR1

Freescale Semiconductor Qty: 1159pcs

APTGT600U120D4G Insulated Gate Bipolar Transistor, 880A I(C), 1200V V(BR)CES, N-Channel, MODULE-4; APTGT600U120D4G

APT Qty: 64pcs