IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3030

MB252

MB252 Bridge Rectifier Diode, 1 Phase, 25A, 200V V(RRM), Silicon, ROHS COMPLIANT, METAL, MB, 4 PIN; MB252

Diodes Inc Qty: 465pcs

STPS40150CG

STPS40150CG 150 V, 40 A dual High Voltage Power Schottky Rectifier; STPS40150CG

STMicroelectronics Qty: -15pcs

BLF2425M8L140U

BLF2425M8L140U RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLF2425M8L140U

NXP Semiconductors Qty: 1721pcs

NYC226STT1G

NYC226STT1G Silicon Controlled Rectifier, 1.5A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-261AA, TO-261, 4 PIN; NYC226STT1G

ON Semiconductor Qty: 2062pcs

GBPC50005-G

GBPC50005-G Bridge Rectifier Diode, 50A, 50V V(RRM),; GBPC50005-G

Comchip Technology Qty: 710pcs

CM200RL-24NF

CM200RL-24NF Mitsubishi Electric IGBT module rated 1200 V and 200 A. Check fit, gate drive and cooling for heavy-duty variable frequency drive repair.

Mitsubishi Qty: 160pcs

HSMP-3895-BLKG

HSMP-3895-BLKG Pin Diode, 100V V(BR), Silicon, LEAD FREE PACKAGE-3; HSMP-3895-BLKG

Avago Technologies US Inc. Qty: 1056pcs

LPS48D12625J

LPS48D12625J Analog Circuit; LPS48D12625J

PACKAGED Qty: 248pcs

SI5936DU-T1-GE3 Power Field-Effect Transistor, 6A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8; SI5936DU-T1-GE3

Vishay Siliconix Qty: 1440pcs

MIG50Q7CSB1X

MIG50Q7CSB1X Toshiba IPM replacement for inverter welders and induction heating supplies. Rated 1200V and 50A for global dispatch.

Toshiba Qty: 300pcs Price: US$105