IXBX55N300 Insulated Gate Bipolar Transistor, 130A I(C), 3000V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXBX55N300
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.