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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N7000_D75Z

2N7000_D75Z

2N7000_D75Z Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92; 2N7000_D75Z
VS-22RIA80

VS-22RIA80

VS-22RIA80 Silicon Controlled Rectifier,; VS-22RIA80
MCD225-14io1

MCD225-14io1

MCD225-14io1 Silicon Controlled Rectifier, 400A I(T)RMS, 221000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element,; MCD225-14io1
TMA126G-L

TMA126G-L

TMA126G-L TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB, TO-220, 3 PIN; TMA126G-L
2MBI200UD-120

2MBI200UD-120

2MBI200UD-120 IGBT Module In-stock / Fuji: 1200V 200A with low switching loss. 90-day warranty, ideal for VFDs and inverters. Global fast shipping. Get quote.
L601E3

L601E3

L601E3 4 Quadrant Logic Level TRIAC, 600V V(DRM), 1A I(T)RMS, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; L601E3
VI-B7T-IU

VI-B7T-IU

VI-B7T-IU DC-DC Booster Module; VI-B7T-IU
VUO190-14NO7

VUO190-14NO7

VUO190-14NO7 Bridge Rectifier Diode, 3 Phase, 165A, 1400V V(RRM), Silicon, ROHS COMPLIANT, MODULE-5; VUO190-14NO7
DDB6U84N10R

DDB6U84N10R

DDB6U84N10R Bridge Rectifier Diode, 104A, 1000V V(RRM),; DDB6U84N10R
TCR22-6

TCR22-6

TCR22-6 Silicon Controlled Rectifier, 1.5A I(T)RMS, 1500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, ROHS COMPLIANT, PLASTIC, E PACKAGE-3; TCR22-6