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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VCO132-14IO7

VCO132-14IO7

VCO132-14IO7 Silicon Controlled Rectifier, 200A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-10; VCO132-14IO7
FCA76N60N

FCA76N60N

FCA76N60N Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 76 A, 36 mΩ, TO-3P, 450-TUBE; FCA76N60N
BS236UH25V700

BS236UH25V700

BS236UH25V700 Electric Fuse, 700A, 250VAC, 100000A (IR), Inline/holder,; BS236UH25V700
BC637RL1G

BC637RL1G

BC637RL1G High Current NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; BC637RL1G
BC560CZL1

BC560CZL1

BC560CZL1 100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN; BC560CZL1
VI-B7J-EV

VI-B7J-EV

VI-B7J-EV DC-DC Booster Module; VI-B7J-EV
2N4119A

2N4119A

2N4119A Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AF; 2N4119A
2SB1122S-TD-E

2SB1122S-TD-E

2SB1122S-TD-E Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Single PCP, SOT-89 / PCP-1, 1000-REEL; 2SB1122S-TD-E
APTGF50DH120T3G

APTGF50DH120T3G

APTGF50DH120T3G Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGF50DH120T3G
2SC4445

2SC4445

2SC4445 Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, FM100, 3 PIN; 2SC4445