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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SW50CXC350

SW50CXC350

SW50CXC350 DIODE 1030 A, 5000 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW50CXC350
SW10CXC27C

SW10CXC27C

SW10CXC27C Rectifier Diode, 1 Phase, 1 Element, 5700A, 1000V V(RRM), Silicon,; SW10CXC27C
S6012L

S6012L

S6012L Silicon Controlled Rectifier; S6012L
VI-2N2-CU

VI-2N2-CU

VI-2N2-CU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-2N2-CU
NSV60601MZ4T1G

NSV60601MZ4T1G

NSV60601MZ4T1G Low VCE(sat) Transistor, NPN, 60 V, 6.0 A, SOT-223 (TO-261) 4 LEAD, 1000-REEL; NSV60601MZ4T1G
CM600HA-24A

CM600HA-24A

Mitsubishi's CM600HA-24A is a robust 1200V/600A IGBT module. Featuring low thermal resistance, it delivers exceptional reliability and power density for high-demand power systems.
SKM400GB125D

SKM400GB125D

SKM400GB125D IGBT Module In-stock / Semikron: 1200V 400A half-bridge. 90-day warranty, for AC inverter drives. Global fast shipping. Get quote.
F1827CCH400

F1827CCH400

F1827CCH400 Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 400V V(RRM), 1 Element, ROHS COMPLIANT PACKAGE-5; F1827CCH400
C50M

C50M

C50M Ring Terminal,; C50M
MRF6V13250HR5

MRF6V13250HR5

MRF6V13250HR5 L BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRF6V13250HR5