IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3181

CM150DY-12H

CM150DY-12H Mitsubishi Electric IGBT module for inverter welders and induction heating supplies, rated 600 V and 150 A; assess retrofit fitment.

Mitsubishi Qty: 340pcs Price: US$55

MMBT2132T3

MMBT2132T3 Bipolar Junction Transistor, SC-74 (SC-59ML) 6 LEAD, 10000-REEL; MMBT2132T3

ON Semiconductor Qty: 976pcs

MMBF5434

MMBF5434 N-Channel Switch, 3000-REEL; MMBF5434

Fairchild Semiconductor Qty: 3071pcs

MMBF4393LT3G

MMBF4393LT3G N-Channel JFET Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL; MMBF4393LT3G

ON Semiconductor Qty: 979pcs

IXFN30N120P

IXFN30N120P Power Field-Effect Transistor, 30A I(D), 1200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN30N120P

IXYS Qty: 199pcs

IXFN24N100

IXFN24N100 Power Field-Effect Transistor, 24A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4; IXFN24N100

IXYS Qty: 211pcs

IXFN140N20P

IXFN140N20P Power Field-Effect Transistor, 115A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN140N20P

IXYS Qty: 353pcs

IXFK80N60P3

IXFK80N60P3 Power Field-Effect Transistor, 80A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3; IXFK80N60P3

IXYS Qty: 960pcs

IXFK230N20T

IXFK230N20T Power Field-Effect Transistor, 230A I(D), 200V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN; IXFK230N20T

IXYS Qty: 1389pcs

IXFH12N100

IXFH12N100 Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN; IXFH12N100

IXYS Qty: 1252pcs