IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

7MBR30NF060

7MBR30NF060

7MBR30NF060 FUJI 600V / 30A / PIM
RUQ050N02TR

RUQ050N02TR

RUQ050N02TR Power Field-Effect Transistor, 5A I(D), 20V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN; RUQ050N02TR
APTGF15H120T1G

APTGF15H120T1G

APTGF15H120T1G Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF15H120T1G
2N6989U

2N6989U

2N6989U Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon; 2N6989U
DDTC114GE-7

DDTC114GE-7

DDTC114GE-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; DDTC114GE-7
STTH1602CG-TR

STTH1602CG-TR

STTH1602CG-TR 200 V, 16 A dual Ultrafast Diode; STTH1602CG-TR
Q2008DH3RP

Q2008DH3RP

Q2008DH3RP Alternistor TRIAC, 200V V(DRM), 8A I(T)RMS, TO-252AA, DPAK-3; Q2008DH3RP
VI-JTL-CZ

VI-JTL-CZ

VI-JTL-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JTL-CZ
APTGF90DA60CT1G

APTGF90DA60CT1G

APTGF90DA60CT1G Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGF90DA60CT1G
VI-J1X-CW

VI-J1X-CW

VI-J1X-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J1X-CW