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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-JTM-EW

VI-JTM-EW

VI-JTM-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-JTM-EW
CM400HU-24H

CM400HU-24H

CM400HU-24H IGBT Module In-stock / Mitsubishi: 1200V 400A. High-speed switching for industrial drives. 90-day warranty. Contact our sales team.
VI-2TN-EV

VI-2TN-EV

VI-2TN-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, MODULE-9; VI-2TN-EV
PK90F40

PK90F40

PK90F40 Silicon Controlled Rectifier, 90000mA I(T), 400V V(RRM); PK90F40
DDTC143FCA-7-F

DDTC143FCA-7-F

DDTC143FCA-7-F Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3; DDTC143FCA-7-F
APT35GT120JU3

APT35GT120JU3

APT35GT120JU3 Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4; APT35GT120JU3
R7200806

R7200806

R7200806 Powerex Rectifier Diode, 1 Phase, 1 Element, 600A, 800V, Silicon
VDI25-06P1

VDI25-06P1

VDI25-06P1 Insulated Gate Bipolar Transistor, 24.5A I(C), 600V V(BR)CES, N-Channel, ECOPAC-10; VDI25-06P1
IRG4PH50KDPBF

IRG4PH50KDPBF

IRG4PH50KDPBF Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRG4PH50KDPBF
BSM181

BSM181

BSM181 Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET; BSM181