IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MMBT5401LT1

MMBT5401LT1

MMBT5401LT1 High Voltage PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL; MMBT5401LT1
RHU003N03T106

RHU003N03T106

RHU003N03T106 Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN; RHU003N03T106
VI-24W-IW

VI-24W-IW

VI-24W-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-24W-IW
CSD17506Q5A

CSD17506Q5A

CSD17506Q5A 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150; CSD17506Q5A
FQN1N60CTA

FQN1N60CTA

FQN1N60CTA Power MOSFET, N-Channel, QFET®, 600 V, 0.3 A, 11.5 Ω, TO-92, 2000-FNFLD; FQN1N60CTA
PTMB100B12

PTMB100B12

PTMB100B12 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19; PTMB100B12
VI-2WM-EV

VI-2WM-EV

VI-2WM-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, MODULE-9; VI-2WM-EV
VI-JNT-IY

VI-JNT-IY

VI-JNT-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JNT-IY
MBRT30040R

MBRT30040R

MBRT30040R 40V 300A Silicon Schottky Rectifier in Three Tower Package; MBRT30040R
PDMB300B12

PDMB300B12

PDMB300B12 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7