SKM100GB128D Semikron 1200V 100A IGBT Module

Content last revised on January 14, 2026

High-Efficiency Switching with the SKM100GB128D: A Technical Overview for Industrial Power Systems

The SKM100GB128D is a high-performance dual IGBT module optimized for switching efficiency and long-term thermal reliability in standardized SEMITRANS 2 footprints.

1200V | 100A | Vce(sat) 1.70V

• Minimal Switching Losses: Utilizing Trench IGBT3 technology to reduce total power dissipation.
• Enhanced Thermal Cycling: Isolated copper baseplate using DBC technology for superior heat spread.

How does the low Vce(sat) of 1.70V impact system design? It allows engineers to achieve higher power density by reducing the cooling requirements of the power stage. For 400V AC industrial drives prioritizing thermal margin and switching speed, this 1200V module is the optimal choice.

Application Scenarios & Value

Achieving System-Level Benefits in High-Frequency Power Conversion

The SKM100GB128D is specifically engineered for applications demanding high reliability under continuous load, such as Variable Frequency Drives (VFD) and Uninterruptible Power Supplies (UPS). In a typical VFD application, the 100A continuous collector current rating at Tc=80°C provides the necessary headroom to handle the startup current surges associated with inductive motor loads. By integrating Semikron CAL Diode technology as the free-wheeling component, the module exhibits a soft-switching characteristic that significantly mitigates Electromagnetic Interference (EMI), a critical factor for compliance with IEC 61800-3 standards.

For engineers designing welding power supplies, the SKM100GB128D offers a robust solution for the high-frequency inverter stage. Its low parasitic inductance package ensures minimal voltage overshoots during high di/dt switching events. While this 100A module is suitable for medium-power applications, for systems requiring higher current handling within the same series, the related SKM200GB128D offers an increased current rating of 200A, while the SKM300GB128D provides even higher capacity for heavy-duty industrial requirements. These modules are fundamental to modern high-efficiency power systems.

Key Parameter Overview

Decoding the Specs for Enhanced Switching Reliability

The following specifications are derived from the official Semikron technical documentation to support precise component evaluation.

Download the SKM100GB128D datasheet for detailed specifications and performance curves via the manufacturer's portal or official product page.

Technical & Design Depth Profiling

Advanced Trench IGBT3 and DBC Integration for Power Density

The core of the SKM100GB128D is its Trench IGBT3 silicon, which represents a significant leap in Vce(sat) versus Switching Loss trade-offs. To visualize the impact of Vce(sat), consider it as the "pipe resistance" in a high-pressure water system; a lower value means more energy reaches the motor drive with less wasted as "friction heat" within the module. This is critical for maintaining high IGBT Module efficiency.

Furthermore, the use of Direct Bonded Copper (DBC) technology provides an isolated baseplate that acts as a thermal superhighway. The Rth(j-c) of 0.25 K/W ensures that heat generated during the 13.0 mJ turn-on phase is rapidly dissipated. This thermal management is comparable to a high-end radiator system in a performance vehicle, preventing "engine" (junction) overheating during peak stress. Such Thermal Management is essential for achieving the voltage control precision required in modern automation.

Industry Insights & Strategic Advantage

Aligning Industrial Designs with Global Energy Regulations

As global industries pivot toward Industry 4.0 and carbon neutrality, the role of efficient power semiconductors becomes a strategic focal point. The SKM100GB128D serves as a reliable building block for high-efficiency Solar Inverters and Servo Drives, where every percentage point of efficiency counts toward TCO (Total Cost of Ownership) reduction. By utilizing modules with standardized footprints like SEMITRANS 2, manufacturers can future-proof their designs, allowing for easier maintenance and potential upgrades as IGBT technology evolves.

The integration of CAL diodes within this module specifically addresses the growing requirement for Soft Switching behavior, which simplifies Gate Drive design and reduces the need for heavy EMI filtering. This strategic advantage enables a faster time-to-market for complex industrial systems, ensuring compliance with strict international power quality standards. For further reading on selection criteria, see our guide on IGBT selection beyond Vce(sat).

FAQ

• What is the primary benefit of the SKM100GB128D's Trench IGBT3 technology? It significantly reduces conduction losses, leading to cooler operation and higher energy efficiency in high-duty cycle applications.
• How does the 0.25 K/W Rth(j-c) value impact my heatsink selection? This relatively low thermal resistance allows for a smaller heatsink footprint or higher ambient operating temperatures while keeping the junction temperature safely below the 150°C limit.
• Can this module be used in 690V AC systems? No, with a Vces of 1200V, it is designed for 400V–480V AC systems. For 690V lines, a 1700V rated module is required to ensure sufficient voltage safety margins.
• Is the SKM100GB128D compatible with existing SEMITRANS 2 mounting hardware? Yes, it follows the standardized mechanical dimensions of the SEMITRANS 2 package, ensuring drop-in compatibility for standard industrial mounting and busbar configurations.

What is the primary benefit of its low Vce(sat) design? It maximizes efficiency by minimizing conduction losses during high-current operation.
How does the DBC substrate improve reliability? It provides superior thermal coupling and electrical isolation, reducing mechanical stress during power cycling.

Effective power stage design requires balancing thermal dissipation with switching speed to ensure long-term system integrity.