Semikron SKM151A4R IGBT Module

Features • N Channel, enhancement mode • Short internal connections avoid oscillations • With built-in gate resistor chips (“R”) Rgtotal = 1,3 Ω • Without hard mould (environmental aspects) • Isolated copper baseplate using DCB Direct Copper Bonding Ceramic • All electrical connections on top for easy busbaring • Large clearance (10 mm) and creepage distances (13 mm) Typical Applications • Switched mode power supplies • DC servo and robot drives • DC choppers • Resonant and welding inverters • AC motor drives • Laser power supplies • UPS equipment • Not suitable for linear amplification Maximum ratings and characteristics  .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:500V Gate-Emitter voltage VGES:±20V Collector current Ic:70A Collector current Icp:280A Collector power dissipation Pc:180W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mounting screw torque 3.5 *1 N·m This is an electrostatic discharge sensitive device (ESDS). 1) Tcase = 25 °C unless otherwise specified 2) IF = – ID VR = 100 V –diF/dt = 100 A/µs